Method for manufacturing differential isolation structures in a semiconductor electronic device and corresponding structure

ABSTRACT

Embodiments of this invention relate to a method for manufacturing isolation structures with different depths in a monolithically integrated semiconductor electronic device. An inventive method according to an embodiment of the invention comprises a first step of defining active areas on a semiconductor material substrate, a second step of forming isolation structures by realising trenches in said substrate and then filling them with field oxide, a third step of defining lithographically at least a first device area, and a fourth step of realising a digging in the substrate and in the field oxide of said first device area.

PRIORITY CLAIM

This application claims priority from European patent application No. 03425459.9, filed Jul. 11, 2003, which is incorporated herein by reference.

TECHNICAL FIELD

The present invention relates to a method for manufacturing isolation structures in an electronic device.

More particularly, the invention relates to a method for manufacturing isolation structures of different thickness in a monolithically integrated semiconductor electronic device.

Although not limited to, the invention particularly relates to isolation structures of different thickness in a monolithically integrated semiconductor electronic device, and containing a matrix of non-volatile memory cells and associated circuitry, reference being made in the following description to this field of application for convenience of explanation only.

BACKGROUND

As it is known, a monolithically integrated semiconductor electronic device consists of electrically active areas, commonly known as the active areas, and of electrically passive areas, commonly known as isolation areas. Active areas can be classified according to the type of electric structure that they contain. For example, there can be storage areas typically containing memory cells, and circuit areas typically containing transistors, capacitors and resistors.

A block diagram, not to scale, of a monolithically integrated semiconductor electronic device 10 and of advanced generation is shown in FIG. 1 by way of example. This device, which contains memory, circuit, and isolation areas not shown in FIG. 1, typically has at least one circuit area 102 and at least one so-called matrix area 101, the latter comprising a plurality of memory cells being matrix-like arranged. This means that the memory cells are arranged in rows, or word-lines, and columns, or bit-lines.

Associated with this memory cell matrix is a plurality of transistors of the circuit area 102, which forms the control circuitry of the device.

The isolation areas provided in the device 10 have the aim of isolating, electrically and physically, each active area from the others, and of reducing possible parasitic effects. These isolation areas are usually formed simultaneously in different areas of the device 10, and appear in both the matrix and the circuit areas, 101 and 102.

Now, the technology progress presses a demand for reduced size of monolithically integrated semiconductor electronic devices, and this requirement makes it necessary to develop innovative technological solutions, allowing to manufacture of reduced-size devices with satisfactory structural and functional characteristics.

In particular, the isolation areas should have suitable sizes for memory cells in the matrix area 101 to be manufactured with a high density layout. Both the high density memory cells of the matrix area 101 and the transistors of the circuit area 102 must have, on the other side, an optimal behaviour. At present in more advanced technologies, the reduction of isolation structure sizes, necessary to provide the matrix area 101 with high-density memory cells, comes out in a lower reduction of the parasitic effects in the circuit area 102, and in the consequent degradation of the transistor electrical performances. These problems impose manufacture of isolation structures of different thickness according to the device area being considered, a thickness which is to be smaller in the matrix area 101 than in the circuit area 102. These isolation structures of different thickness are defined as differential isolation. Schematic cross-sections, not drawn to scale, of differential isolation structures 20 of the STI (Shallow Trench Isolation) type are shown in FIG. 2, this figure indicating isolation structures 201 of the matrix area 101 alternated with matrix active areas 202, and isolation structures 203 of the circuit area 102 alternated with active circuit areas 204.

A prior art solution to obtain differential isolation structures 20 consists in manufacturing isolation structures, separately and by means of dedicated masks, these structures having different thickness and depths. In detail, this solution is exemplified by STI structures, and comprises the following steps:

A) providing, on a semiconductor material substrate, a succession of dielectric layers, typically made of a silicon oxide or pad oxide layer and a nitride layer;

B) defining, as by lithography and an appropriate resist mask, the active areas 204 of the circuit area 102;

C) anisotropically etching the nitride and pad oxide layers in the circuit area 102;

D) etching silicon, suitable to form STI isolation structures in the circuit area 102;

The steps of forming a succession of dielectric layers (A), of lithographic defining (B), of nitride and pad oxide etching (C) and of silicon etching (D), on a substrate, jointly traces a standard flow process, known as single-isolation process, wherein the isolation structures are formed simultaneously in the matrix area and in the circuit area of the device.

E) removing the resist used in the above lithographic definition;

F) repeating the lithographic defining (B), nitride and pad oxide etching (C), silicon etching (D), and resist removing (E) steps for the matrix area 101. In this case, the silicon etching step (D) must be appropriate to form STI isolation structures which are thinner than the STI isolation structures formed in the circuit area 102. Differential isolation structures 20 are thus provided.

Although advantageous on several counts, this solution has the drawback of requiring the repetition of some process steps with respect to what happens in the standard single-isolation flow process. In particular, the lithographic defining (B), nitride and pad oxide etching (C), silicon etching (D), and resist removing (E) steps in the above exemplary flow process are to be carried out a first time for the circuit area 102 and a second time for the matrix area 101. In addition, in this solution, the mask employed during the lithographic defining step (B) is used a second time. A direct negative consequence of this solution stays in the increased cost and time requirements for manufacturing the isolation structures.

Problems are also brought about by the presence of memory cells inside monolithically integrated semiconductor electronic devices 10 and of advanced generation. For instance, where the memory cells are floating gate non-volatile cells, unevenness of size and thickness often appears in the layers that form the memory cells and transistors, this unevenness affecting the device performance.

An exemplary floating gate non-volatile memory cell, to be typically comprised in the matrix area 101 of the device 10, is schematically shown, in cross section and not to scale, limited to its layers of concern in FIG. 3, where the whole memory cell is indicated with reference number 30. This cell 30 comprises a source region 301, a drain region 302, and a succession of layers forming a gate region globally indicated with reference number 303. The gate region 303 comprises a first or floating gate layer 305 formed above the substrate of semiconductor material and separated from the latter by a thin dielectric layer 304, called tunnel oxide. A second or control gate layer 307 is capacitively coupled to the first floating gate layer 305 by a dielectric layer 306, called interpoly dielectric.

An exemplary transistor 40 of the circuit area 102 is schematically shown, in cross section and not to scale, limited to its layers of concern in FIG. 4.

This transistor typically includes a gate region 303, comprising a gate layer 404 formed above the semiconductor material substrate and separated from the latter by a thin dielectric layer 401, called gate oxide. A source region 402 and a drain region 403 are integrated in the substrate of semiconductor material at the sides of the gate region 303.

As it is well known, the control gate layer 307 and the gate layer 404 are usually formed through a first step (G) of depositing the same polysilicon layer, a second step (I) of lithography defining, and a third step (J) of etching the polysilicon layer.

A problem affecting all monolithically integrated semiconductor electronic devices 10 and of advanced generation, having memory cells 30 in the matrix area 101 and transistors 40 in the circuit area 102, arises in the defining of the polysilicon layer that constitutes the control gate layer 307 and gate layer 404, especially at the boundary of the matrix area 101. In fact the thickness of the layer succession under the polysilicon layer is different in the matrix 101 and circuit 102 area, typically higher in the matrix area 101 because of the presence of the floating gate layer 305 and the interpoly dielectric 306. Thus, the polysilicon layer is bound to be non-planar at the boundary of the matrix area 101. This unevenness causes possible lithographic defining problems resulting in the size and performance of those memory cells 30 which are located at the boundary of the matrix area 101.

A first known solution solves this problem by performing a CMP (Chemical-Mechanical Polishing) step (H) after the polysilicon layer depositing step (G) to reduce the thickness of the polysilicon layer in the matrix area 101. The lithographic defining step (I) of the polysilicon layer and the etching step (J) are then carried out.

However, the above solution can have a drawback, due to the fact that the CMP technique applied during the etching step (H) needs, to be correctly and successfully performed, the layer to be etched to have an almost planar morphology. Accordingly to this solution, the different height of the polysilicon layer in the matrix areas 101 and in the circuit area 102 requires to maintain the polysilicon layer depositing step (G) until an almost planar morphology of the layer itself is achieved. In this way, however, a portion of the polysilicon layer of particularly high thickness is obtained in the circuit area 102, which brings about subsequent doping problems of that polysilicon portion.

A second solution (Patent Application EP 02425311.4) implies the polysilicon depositing step (G) to be followed by a masking step (L) exposing a portion of the polysilicon layer in the matrix area 101. An etching step (M), called etch-back, of the portion of the polysilicon layer in the matrix area 101 and a step (N) of removing the resist used in the above masking step (L) are then carried out. This is followed by the lithographic polysilicon layer defining step (I) and by the etching step (J).

Although achieving its object, also this solution shows integration problems because the etch-back step (M) is hard to control and can easily lead to an excessive reduction of the polysilicon layer thickness of the matrix area 101, with subsequent quality problems of the dielectric layers and possible device malfunctioning.

The technical problem that underlies this invention is to provide a method for manufacturing a monolithically integrated semiconductor electronic device and of advanced generation, with such characteristics as to allow differential isolation structures to be formed and the gate regions accurately defined especially at the boundary of a memory cell matrix, thereby overcoming the limitations and/or drawbacks of prior art methods.

SUMMARY

An aspect of this invention is realising a digging in one or more areas of a monolithically integrated semiconductor electronic device. This digging is realised after a formation step of isolation structures in the device, and before forming and defining steps of electrically active layers above a starting substrate.

On the basis of this aspect, the current prior art technical problem is solved by a method as herein described.

Moreover, on the basis of this aspect the current prior art technical problem is further solved by a structure as herein described.

Features and advantages of the inventive methods and structures should become apparent from the following description of an embodiment thereof, given by way of non-limiting example with reference to the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

In these drawings:

FIG. 1 is a block diagram, not drawn to scale, limited to concerned regions of a monolithically integrated semiconductor electronic device according to the prior art;

FIG. 2 is a schematic cross-section, not drawn to scale, of STI differential isolation structures according to the prior art;

FIG. 3 schematically shows a cross section, not to scale, of an example of floating gate non-volatile memory cell according to the prior art, limited to concerned layers thereof;

FIG. 4 is a schematic cross-section, not drawn to scale, limited to concerned layers of an example of transistor, typically included within a prior art circuit area;

FIG. 5 is a schematic cross-section, not drawn to scale, limited to concerned layers of a preferred structure according to an embodiment of the invention;

FIGS. 6 to 9G are schematic cross-sections, not drawn to scale, limited to concerned layers at different steps of an inventive method according to an embodiment of the invention.

DETAILED DESCRIPTION

The following discussion is presented to enable a person skilled in the art to make and use the invention. Various modifications to the embodiments will be readily apparent to those skilled in the art, and the generic principles herein may be applied to other embodiments and applications without departing from the spirit and scope of the present invention. Thus, the present invention is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles and features disclosed herein.

According to an embodiment of the invention, a monolithically integrated semiconductor electronic device comprises at least a matrix area and at least a circuit area, and it comprises a structure 50 as shown schematically in cross-section, not to scale, in FIG. 5 limited to concerned layers. The structure 50 exemplifies a device containing floating gate non-volatile flash memory cells. The structure 50 includes differential isolation structures 501 of the STI (Shallow Trench Isolation) type, active areas 502 of floating gate non-volatile flash memory cells, and active areas 503 of transistors. Provided in the active areas 502 are a first tunnel oxide layer 506, a second floating gate layer 507, and a third interpoly dielectric layer 508. Provided in the active areas 503 is a first dielectric layer 509 known as the gate oxide. The differential isolation structures 501 are characterised by a bottom wall 504 extending at the same depth with respect to the surface 205 of the starting substrate in each area of the device. The active areas 502 and 503 are provided at a different depth with respect to the starting substrate surface 205. Accordingly, the morphology of a polysilicon layer 510 provided above the aforementioned layers is substantially planar. These features concur to obtain important advantages as for uniform size of the gate regions in both the matrix and the circuit area, enhancing the device performance and allowing at the same time the STI isolation structures to have different thickness in the matrix and circuit areas.

A method for forming the structure 50 in accordance with an embodiment of the invention advantageously comprises the process steps described here below. The description includes only those commonly used process steps that are necessary to an understanding of this invention.

The figures showing cross-sectional views of portions of an integrated circuit at different steps of its fabrication are not drawn to scale, but they are intended to illustrate major features of this embodiment of the invention.

An inventive method of forming differential isolation structures will now be described in detail with reference to FIGS. 6 to 9 and in relation, for example, to a monolithically integrated semiconductor electronic device which contains floating gate non-volatile flash memory cells and wherein the isolation structures are STI structures. The method according to this embodiment of the invention comprises the steps listed here below, to be carried out in sequential order:

-   -   the exposed surface 205 of a semiconductor material substrate         601, shown in FIG. 6, is provided with a succession of layers of         a dielectric material, made of a silicon or pad oxide layer 602         and nitride layer 603, for example;     -   circuit and matrix active areas are lithographically defined by         means of a mask using for example a resist 604.     -   Portions 603A of the nitride layer 603 left uncovered by the         resist 604 are anisotropically etched;     -   portions 602A of pad oxide 602 and portions 601A of substrate         601 left uncovered by the resist 604 are etched. As shown in         FIG. 7, this etching step forms trenches 701 in the areas of the         device left uncovered by the resist 604;     -   the resist 604 used in the above lithographic defining step is         removed.     -   The trenches 701 are filled with one or more dielectric material         layers, obtained through oxidation or deposition. The aggregate         of these dielectric material layers is commonly referred to as         the field oxide and it is indicated with reference number 801 in         FIG. 8;     -   preferably, the field oxide 801 is subjected to a thickening         treatment to improve unevenness as for speed in etching the         several layers forming it;     -   a planarising step is carried out, e.g. through CMP         (Chemical-Mechanical Polishing) technique. This planarising         step, not illustrated, is effective to reduce the height of the         field oxide 801 with respect to the surface of the substrate         601, levelling it down to that of a portion 603B of the nitride         layer 603 still present.     -   The above planarising step may be followed by a wet etching         step, directed to further reduce the height of the field oxide         801 with respect to the surface of the substrate 601. A field         oxide 801A, dot-lined in FIG. 8, is thus obtained in some areas         of the device, the field oxide having a lower height than that         of portion 603B of the nitride layer 603 still present, always         with respect to the surface of substrate 601.

Referring now to FIGS. 9A-9G, the following steps are carried out at this step of the inventive method according to this embodiment, in sequential order:

-   -   a matrix area 901 is lithographically defined as shown in FIG.         9A by means of a mask using a resist 903, for example. This         lithographic defining step is to protect a circuit area 902         during the next processing steps;     -   the left-over portion 603B of the nitride layer 603 is removed         from the matrix area 901, selectively with respect to the field         oxide 801A. This removal may occur for example by chemical         attack with phosphoric acid (H3PO4);     -   left-over portions 602B of the pad oxide layer 602 are removed         from the matrix area 901 as shown in FIG. 9C, for example         through a BOE (Buffered Oxide Etch) etching or through a         solution of diluted hydrofluoric acid (HF);     -   advantageously in this embodiment of the invention, the exposed         portion of the substrate 601 and of the field oxide 801A are         etched in the matrix area 901. In this embodiment, this etching         realises a digging, which brings down the level of the active         areas 502 in the matrix area 901, preferably of equal thickness         to that of the floating gate layer to be formed after. In the         example, a digging of depth from approximately 50 to 200 nm,         preferably from 80 to 130 nm. The formation of the digging is         preferably performed in two subsequent steps, comprising a first         step whereat the exposed portion of the substrate 601 is         selectively etched to the field oxide 801A, and a second etching         step whereat the field oxide 801A is etched. This field oxide         801A etching may be realised either through a BOE etching or         through a diluted HF solution. Thus, in an advantageous way,         differential isolation structures 501 are obtained by applying         the method of this embodiment of the invention, these structures         in the example here described are of the STI type and they are         shown in FIG. 9D.     -   The above resist 903 is then removed;     -   a sacrificial dielectric 905 is then grown in the matrix area         901 as shown in FIG. 9E. In the here considered example of flow         process, the sacrificial dielectric 905 is silicon oxide and it         has the same thickness, ranging from 10 to 20 nm, as the portion         602C of the pad oxide 602 left over in the circuit area 902.     -   The ion implanting steps needed to form the memory cells of the         matrix area 901 are performed through the sacrificial dielectric         905. These ion implanting steps are screened off in the circuit         area 902 by the portion 603B yet to be removed of the nitride         layer 603;     -   portion 603B of the nitride layer 603, left over in the circuit         area 902, is removed as shown in FIG. 9F;     -   the sacrificial dielectric 905 is removed from the matrix area         901. Advantageously, in one embodiment of the invention, the         left-over portion 602C of pad oxide 602 in the circuit area 902         is removed concurrently therewith, as shown in FIG. 9G.

The here described example of flow process then continues with the customary steps of forming and defining dielectric material layers and electrically active layers on the active areas 502 of the matrix area 901 and 503 of the circuit area 902, shown in FIG. 9G. The active devices, such as the transistors in the circuit area 902 and the memory cells in the matrix area 901, would be completed next using conventional techniques.

The above described process steps of this invention provide, without further alterations of the flow process considered, a near-planar morphology at the level of definition of the gate regions for the device memory cells and transistors, as shown in FIG. 5.

This planar morphology, advantageously provided by this embodiment of an inventive method, makes the lithographic defining of the gate regions in the circuit area 902 and the matrix area 901 easier to carry out in an optimum manner.

The embodiment of an inventive method just described affords two advantages, being independent one another, in a monolithically integrated semiconductor electronic device.

On one side, this embodiment provides differential isolation structures in areas requiring isolation structures of different thickness, without requiring repetition, with respect to a standard single-isolation flow process, of a series of steps such as lithographic defining of active areas, dielectric layers etching, silicon etching, and resist removal. Furthermore, with respect to a standard single-isolation flow process, this embodiment provides differential isolation structures without using an additional mask that is needed in the prior art.

So, in general, the embodiment of the invention can be applied and it is advantageous whenever a monolithically integrated semiconductor electronic device is to be provided with isolation structures of different thickness in different areas, even when no floating gate layers are provided.

The method according to an embodiment of this invention is also effective to remove all current problems during lithographic defining of gate regions of memory cells and transistors, thereby overcoming the disadvantages of the prior art.

These advantages are realised by introducing, in the construction of memory cells and transistors, an adequately different starting level with respect to a semiconductor material substrate. This feature advantageously overcomes the limitations of prior solutions to the aforementioned problems.

In the light of the above considerations, the method according to an embodiment of the invention may be applied and it is advantageous whenever planarity requires to be enhanced in the defining of one or more so-called pre-metal layers, that is layers formed over active areas before the electric contact and interconnection structures are formed. Thus, an aggregate of pre-metal layers is provided by this method with a planar overall morphology, which is obviously advantageous in terms of correct size of the concerned layers, thus leading to an improvement of the device performance.

Furthermore, the structure according to this embodiment of the invention is highly advantageous also in the case of a monolithically integrated semiconductor electronic device, also not comprising floating-gate non-volatile memory cells, wherein areas involving the presence of different-thickness isolation structures and active devices with different heights with respect to a starting substrate are provided. In particular, the advantages of the inventive structure are to be appreciated when isolation structures of smaller thickness and active devices of greater height must be provided in one area with respect to another. In this case, in fact, the embodiment of the invention meets both requirements by a novel single structure.

Various types of integrated circuits can be formed according to embodiments of the present invention, such as memory devices like FLASH memory devices. Such integrated circuits can be used in a variety of different types of electronic systems, such as computer systems, cellular phones, personal digistal assisntants, and so on.

From the foregoing it will be appreciated that, although specific embodiments of the invention have been described herein for purposes of illustration, various modifications may be made without deviating from the spirit and scope of the invention. 

1. A method for manufacturing differential isolation structures in a monolithically integrated semiconductor electronic device, comprising a first step wherein active areas are defined on a semiconductor material substrate, a second step of forming isolation structures by realising trenches in said substrate and subsequent formation of field oxide in said trenches, and a third step of defining lithographically at least a first area of the device, characterised in that it provides, in the above first area, a step of realisation of a digging in said field oxide and said substrate, before electrically active layers are formed and defined over said substrate, to obtain isolation structures having different thicknesses.
 2. A method according to claim 1, characterised in that said digging is realised in two successive steps.
 3. A method according to claim 2, characterised in that said two successive steps for realising said digging comprise a first step of selective etching of said substrate towards said field oxide, and a second step of etching of said field oxide.
 4. A method according to claim 3, characterised in that it provides a BOE etching during said second step of etching of said field oxide.
 5. A method according to claim 3, characterised in that it provides a diluted HF solution in said second step of etching of said field oxide.
 6. A method according to claim 1, comprising a subsequent step of forming a floating gate layer, characterised in that said digging has the same thickness as that of said floating gate layer.
 7. A method according to claim 1, characterised in that it realises said digging of a thickness comprised between 50 and 200 nm.
 8. A method according to claim 1, characterised in that it realises said digging of a thickness comprised between 80 and 130 nm.
 9. A method according to claim 1, characterised in that it provides a step of forming a sacrificial dielectric within said first device area.
 10. A method according to claim 9, characterised in that said sacrificial dielectric has a thickness comprised between 10 and 20 nm.
 11. A method according to claim 9, wherein a step of forming, on said substrate, a succession of one or more dielectric layers comprising a first silicon oxide layer is provided before realising said digging, characterised in that said sacrificial dielectric is silicon oxide and it has the same thickness as that of said first silicon oxide.
 12. A method according to claim 11, wherein a step of removing said sacrificial dielectric and a step of removing a portion of said first silicon oxide layer are provided, characterised in that said removal of said sacrificial dielectric and said removal of a portion of said first silicon oxide layer are carried out simultaneously.
 13. A method according to claim 9, characterised in that it also provides at least one step of implanting in said first device area and of screening off said implanting step in at least a second device area by means of a first nitride layer.
 14. A monolithically integrated semiconductor electronic device structure, of the type containing at least a first area and at least a second area, comprising a starting semiconductor material substrate, active areas (and differential isolation structures, characterised in that said differential isolation structures have a bottom wall placed at the same depth with respect to the surface of said starting substrate, said active areas of said first area and said second area are placed at a different depth with respect to the surface of said starting substrate.
 15. A structure according to claim 14, characterised in that said differential isolation structures are of the STI type (shallow trench isolation) and they are filled with field oxide.
 16. A structure according to claim 14, characterised in that said active areas of said first area are at a lower height with respect to said active areas of said second area, as far as said bottom wall of said differential isolation structures are concerned.
 17. A structure according to claim 14, characterised in that a first plurality of electrically active pre-metal layers is provided above said active areas of said first area, and that a second plurality of electrically active pre-metal layers is provided above said active areas of said second area, said first plurality of electrically active pre-metal layers comprising a different number of electrically active pre-metal layers from said second plurality of electrically active pre-metal layers.
 18. A structure according to claim 14, characterised in that a first plurality of electrically active pre-metal layers is provided above said active areas of said first area, and that a second plurality of electrically active pre-metal layers is provided above said active areas of said second area, said first plurality of electrically active pre-metal layers having a different thickness from said second plurality of electrically active pre-metal layers.
 19. A structure according to claim 17, characterised in that the upper surface of said first plurality of electrically active pre-metal layers and the upper surface of said second plurality of electrically active pre-metal layers are at the same height with respect to said bottom wall of said differential isolation structures.
 20. A structure according to claim 16, characterised in that said active areas of said first area are memory cell active areas and said active areas of said second area are transistor active areas.
 21. A structure according to claim 20, characterised in that said memory cell active areas comprise a first dielectric layer above said memory cell active areas, and comprise a second floating gate layer formed above said first dielectric layer.
 22. A structure according to claim 21, characterised in that the thickness of said second floating gate layer equals the difference in height between said memory cell active areas and said transistor active areas.
 23. A structure according to claim 21, characterised in that said memory cell active areas further comprise a third dielectric layer above said second floating gate layer, the combined thickness of said second floating gate layer and said third dielectric layer being equal to the difference in height between said memory cell active areas and said transistor active areas.
 24. A structure according to claim 23, characterised in that said transistor active areas comprise a fourth dielectric layer above said transistor active areas, and that said memory cell active areas and transistor active areas further comprise a fifth layer of an electrically active material above said first dielectric layer, said second floating gate layer, said third dielectric layer, and said fourth dielectric layer, the morphology of said fifth layer of an electrically active material being near-planar.
 25. A structure according to claim 24, characterised in that said fifth layer of an electrically active material is a polysilicon layer.
 26. A structure according to claim 16, characterised in that the difference in height between said active areas of said first area and of said second area is comprised between 50 and 200 nm.
 27. A structure according to claim 16, characterised in that the difference in height between said active areas of said first area and of said second area is comprised between 80 and 130 nm.
 28. A method of manufacturing differential isolation structures in a semiconductor substrate, comprising: forming active areas on the substrate; forming isolation regions in the substrate, the isolation regions having a first thickness; and for a first area of the substrate including isolation regions contained in that first area, removing portions of the isolation regions and the substrate to form isolation structures having a second thickness that is less than the first thickness.
 29. The method of claim 28 wherein forming isolation regions comprises: forming trenches in the substrate, the trenches having approximately the first thickness; and forming field oxide regions within the trenches.
 30. The method of claim 29 wherein removing portions of the isolation regions and the substrate comprises selective etching of the substrate towards a bottom wall of the field oxide regions and etching of the field oxide regions towards the bottom wall.
 31. The method of claim 28 wherein the first area comprises a lithographically defined area of the substrate.
 32. An integrated semiconductor device including a semiconductor material substrate having a first area, a second area, an initial surface, first active regions in the first area, and second active regions in the second area, the device including first isolation structures formed in the first area and second isolation structures formed in the second area, the first and second isolation structures having bottom walls having a same depth with respect to the initial surface of the substrate, and the first and second active regions having different depths with respect to the initial surface of the substrate.
 33. The device of claim 32 wherein the isolation structures comprise shallow trench isolation (STI) structures filled with field oxide regions.
 34. The device of claim 32 wherein the first area further comprises a circuit area of the device including a plurality of transistors formed therein and wherein the second area of the substrate further comprises a matrix area including a plurality of floating gate transistors formed therein.
 35. The device of claim 34 wherein the device comprises a memory device.
 36. An electronic system, comprising: an integrated semiconductor device, including, a semiconductor material substrate having a first area, a second area, an initial surface, first active regions in the first area, and second active regions in the second area, the device including first isolation structures formed in the first area and second isolation structures formed in the second area, the first and second isolation structures having bottom walls having a same depth with respect to the initial surface of the substrate, and the first and second active regions having different depths with respect to the initial surface of the substrate.
 37. The electronic system of claim 36 wherein the electronic system comprises a computer system. 